High-pressure XPS System

The National Institute of Standards and Technology (NIST) is seeking a High-Pressure XPS System for the CHIPS Plasma XPS project. The system will be used for real-time, in-situ chemical analysis of wafer surfaces during plasma processing. The system consists of a differentially pumped AP XPS spectrometer and an X-ray source capable of providing an intense, focused X-ray beam to the sample under elevated plasma pressure. The contractor shall supply and install the HPXPS system, provide training to new users, and conduct a site acceptance test. The system must meet specific technical specifications, including the ability to operate in UHV and at elevated pressure, and demonstrate a few kcps Ag 3d5/2 count rate at a few Torr N2 pressure. Key features and requirements of the system include: • APXPS analyzer with a working distance of at least 0.3 mm and electron kinetic energy ranges from 20 eV to 1500 eV • Near Ambient Pressure Monochromatized X-ray source with a resolution better than 250 meV and photon flux higher than 10^10 ph/s • Differential pumping systems and control electronics for both the APXPS analyzer and X-ray source • Installation, training, and site acceptance test at NIST • Compliance with all installation safety and prevention regulations • A minimum 1-year warranty for the entire system