Atomic Layer Deposition (ALD) Batch Reactor

The National Institute of Standards and Technology (NIST) is conducting market research to identify potential sources of commercial products/services that satisfy the Government's anticipated needs for an Atomic Layer Deposition (ALD) Batch Reactor. The reactor will be used to fabricate metal oxide and self-assembled monolayer (SAM) interfaces on 200 mm wafer substrates. The key requirements for the ALD reactor include wafer size, wafer heating, wafer uniformity, chamber heating, carrier gas flow control, and precursor manifold. • The ALD reactor should have a wafer size of up to 200 mm and be able to heat the wafer to 300°C or higher. • The reactor should have a carrier gas flow control and a precursor manifold with 5 sources. • The reactor should have a SAM delivery system and optical access for in situ spectroscopic ellipsometry. • The reactor should have a computer-controlled system operation and real-time monitoring of valve states, temperature zones, pressures, and flow rates. • The reactor should have a logging of all sensor data during deposition and saving and loading of user-created deposition recipes.