Contact Metallization for High-Temperature GaN Amplifiers

The NASA/NSSC is seeking a vendor to provide contact metallization for high-temperature GaN amplifiers. The vendor must deliver ohmic contact metallization on AlGaN/GaN that enables the fabrication of GaN amplifiers. The ohmic contacts must support GaN amplifier operation at 800 °C for a minimum of 1 hour in air. The vendor must also deliver documented test results and processes to NASA to enable the GaN amplifier fabrication and delivery within 6 months of receipt of purchase order. • The vendor must deliver ohmic contact metallization on AlGaN/GaN. • The ohmic contacts must support GaN amplifier operation at 800 °C for a minimum of 1 hour in air. • The vendor must deliver documented test results that demonstrate stable specific contact resistance of the source/drain ohmic contact metallization as a function of temperature in air. • The vendor must deliver processes to NASA to enable the GaN amplifier fabrication and delivery within 6 months of receipt of purchase order.