Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

The National Aeronautics and Space Administration (NASA) is seeking a vendor to dry etch a combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate. The vendor will be required to fabricate a 3” and approximately 350 microns thick single crystal 4H-SiC wafer, etch the wafer to 280 microns to a diaphragm having an approximate thickness of 70 microns, and achieve a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface. The vendor will also be required to dry-etch the top side p-GaN to 3 μm to expose the 4H-SiC surface. • The vendor must fabricate one 3” and approximately 350 microns thick single crystal 4H-SiC wafer. • The vendor must etch the wafer to 280 microns to a diaphragm having an approximate thickness of 70 microns. • The vendor must achieve a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface. • The vendor must dry-etch the top side p-GaN to 3 μm to expose the 4H-SiC surface.