Combined Sources Sought Notice/Notice of Intent to Sole Source for Advanced GaN foundry fabrication for D-band devices and circuits.

The National Institute of Standards and Technology (NIST) is seeking information from sources that may be capable of providing Advanced GaN foundry fabrication that can meet the specifications listed. The fabricated integrated circuits will be used to advance metrology for on-wafer GaN transistor characterization, develop unique and new large-signal instrumentation, and support transistor model development at millimeter wave frequencies. The requirements include: • Advanced D-band GaN HEMT process with demonstrated transistor output power density of greater than 2.3 W/mm with associated power gain in D-band. • Dedicated mask set utilizing provided device and circuit designs. • Fabrication using an advanced, D-band capable, GaN MMIC foundry process with thinned wafer backside vias and backside metallization. • Transistor scalable width. • D-band monolithic microwave integrated circuit (MMIC) process design kit (PDK) with scalable small-signal and large-signal transistor models for D-band operation.