Inductively Coupled Plasma Reactive Ion Etching System

The contract is for an Inductively Coupled Plasma Reactive Ion Etching System, which is designed for advanced etching of materials such as transition metal dichalcogenides, metal monochalcogenides, h-BN, graphene, silicon, SiO2, SiNx, and Nb. The system should support substrates 100mm (4 inch) at minimum and include a vacuum load-lock for efficient wafer handling. Key features of the system include: • Advanced etching capabilities • Support for various materials • Vacuum load-lock for efficient wafer handling • Minimum substrate size of 100mm (4 inch)