Description
The National Institute of Standards and Technology is seeking a high-speed ellipsometer for use in an Atomic Layer Deposition (ALD) system. The ellipsometer will be used to measure the deposition rate of ultrathin films and will be a critical component of a CHIPS R&D Metrology program. The technical requirements for the ellipsometer include a time resolution of ~1 ms or faster per wavelength, a multi-wavelength ellipsometer type, and a wavelength range of 370-950 nm or wider. The ellipsometer must also have built-in compensation procedures for window birefringence and temperature-dependent optical constants.
Some key features of the ellipsometer include:
* Time resolution: ~1 ms or faster per wavelength
* Ellipsometer type: Multi-wavelength
* Wavelength range: 370-950 nm or wider
* Minimum number of wavelengths: 8
* Light source: Broadband source or multiple LEDs
* Hardware triggering and synchronization
* Vacuum window compensation: Built-in compensation procedure for window birefringence
* Temperature compensation: Built-in models for temperature-dependent optical constants of common substrates
* Zone averaging: Optional zone averaging
* Source footprint: 6” x 6” x 6” or smaller
* Receiver footprint: 6” x 6” x 6” or smaller
* In situ mounting: Tilt stages for source and receiver compatible with standard ConFlat flanges and arbitrary bolt patterns
* Ex situ base: For mounting ellipsometer for ex situ use on wafer samples
* Electrical: 110 V, single-phase, 60 Hz, power supply and cable included
* Software specifications: Analysis software to process individual measurements, multiple measurements, and time-resolved data using an equivalent optical layer model
* Auto alignment stage: Motorized tilt stage for automatic alignment of source and receiver when mounted on a vacuum chamber for in situ use
Attached files
Contact
Ranae M. Armstrong(Contract Specialist)