Silicon and Silicon/Germanium Epitaxial Wafers

The National Institute of Standards and Technology (NIST) is soliciting quotations for silicon and silicon/germanium epitaxial wafers. The wafers must meet specific requirements, including substrate diameter, film thickness, and dopant concentration. Vendors must source epi substrate wafers that meet the specifications indicated for each item. The delivered wafer size must be 100 mm, and the government requires double-side polished (DSP) wafers for all substrates. The solicitation includes multiple option line items, each with specific requirements for film stacks, dopant concentrations, and layer thickness. • The substrate diameter is 100 mm. • The government is not specifying the production method, and any production method that yields wafers meeting all specifications would be acceptable. • The composition tolerance for SiGe films is 5 atomic percent. • Vendors must offer a price for 10 wafers with an additional per wafer cost. • The lot size is specified when ordered, with a minimum order quantity of 10 wafers.